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| BAT17W Vishay Semiconductors Small Signal Schottky Diode Features * Low turn-on voltage Low capacitance * Ultrafast switching e3 * Ideal for single or double, UHF balanced mixer, modulators and phase detectors. * These diodes are also available in case styles SOT-23 with type designation BAT17, and SOD-323 with type designation BAT17WS * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 17431 Mechanical Data Case: SOD-123 Plastic case Weight: approx. 9.3 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part BAT17W Ordering code BAT17W-GS18 or BAT17W-GS08 L7 Marking Remarks Tape and Reel Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Continuous reverse voltage Forward current Power dissipation 1) Test condition Symbol VR IF Value 4 30 1501) Unit V mA mW TC = 25 C Ptot Valid provided that electrodes are kept at ambient temperature Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Thermal resistance junction to ambient air Maximum junction temperature Storage temperature range 1) Test condition Symbol RthJA Tj TS Value 500 1) Unit C/W C C 125 - 65 to + 150 Valid provided that electrodes are kept at ambient temperature Document Number 85657 Rev. 1.2, 15-Jul-05 www.vishay.com 1 BAT17W Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Minimum reverse breakdown voltage Maximum leakage current Maximum forward voltage Diode capacitance Test condition IR = 10 A VR = 3 V VR = 3 V, Tamb = 60 C IF = 10 mA VR = 0 V, f = 1 MHz Symbol V(BR)R IR IR VF CD Min 4 0.25 1.25 600 1.0 Typ. Max Unit V A A mV pF Package Dimensions in mm (Inches) 1.35 (0.053) max. 0.1 (0.004) max. 0.55 (0.022) 0.25 (0.010) min. 0.15 (0.006) max. Mounting Pad Layout ISO Method E Cathode Band 3.85 (0.152) 2.85 (0.112) 2.55 (0.100) 3.55 (0.140) 1.40 (0.055) 1.70 (0.067) 1.40 (0.055) 0.72 (0.028) 2.40 (0.094) 17432 www.vishay.com 2 Document Number 85657 Rev. 1.2, 15-Jul-05 BAT17W Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85657 Rev. 1.2, 15-Jul-05 www.vishay.com 3 |
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